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  • Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometry [2010]

    Category:
    Artículos
    Authors:
    Abdelhak Bensaoula , Nacer Badi , Alfredo Sanz Medel , Agnès Tempez , Nerea Bordel García , Lara Lobo Revilla , Jorge Pisonero Castro
    Date:
    01 of January of 2010
    It Is a Part of:
    Solar Energy Materials and Solar Cells